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sir662dp.pdf datasheet:

sir662dpsir662dp

New ProductSiR662DPVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0027 at VGS = 10 V 60 Low Qg for High Efficiency60 0.0048 at VGS = 4.5 V 60 27.5 nC Material categorization:For definitions of compliance please see0.0033 at VGS = 6 V 60www.vishay.com/doc?99912PowerPAK SO-8APPLICATIONSD Primary Side SwitchS POL5.15 mm6.15 mm1S Synchronous Rectifier2S3G DC/DC Converter4G Amusement SystemD8D Industrial7D6 LED BacklightingD5SBottom ViewN-Channel MOSFETOrdering Information:SiR662DP-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60V

 

Keywords - ALL TRANSISTORS DATASHEET

 sir662dp.pdf Design, MOSFET, Power

 sir662dp.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sir662dp.pdf Database, Innovation, IC, Electricity

 

 
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