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SQS482ENW www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Single D TrenchFET power MOSFET D 8 D D 7 AEC-Q101 qualified d 7 D D 6 6 5 5 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 1 1 2 2 S S 3 3 S S D 4 4 S S 1 G Top View Bottom View Marking code Q034 PRODUCT SUMMARY G VDS (V) 30 RDS(on) ( ) at VGS = 10 V 0.0085 RDS(on) ( ) at VGS = 4.5 V 0.0100 ID (A) 16 S Configuration Single N-Channel MOSFET Package PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 30 V Gate-source voltage VGS 20 TC = 25 C 16 Continuous drain current a ID TC = 125 C 16 Continuous source current (diode conduction

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