Todos los transistores

 

2n2955.pdf datasheet:

2n29552n2955

isc Silicon PNP Power Transistors 2N2955DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h =20-70@I = -4AFE CCollector-Emitter Saturation Voltage-: V )= -1.1V(Max)@ I = -4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Base Voltage -7 VEBOI Collector Current-Continuous -15 ACI Base Current -7 ABCollector Power DissipationP 115 WC@T =25CT Junction Temperature 200 JStorage Temperature -65~200 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.52 /Wth j-c1isc websitewww.iscsem

 

Keywords - ALL TRANSISTORS DATASHEET

 2n2955.pdf Design, MOSFET, Power

 2n2955.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n2955.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.