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2n3906u.pdf Principales características:

2n3906u2n3906u

Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Compliment to 2N3904U Low current Low voltage MARKING 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Thermal resistance from j unction 250 R /W JA to ambient TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10 A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10 A,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05

 

Keywords - ALL TRANSISTORS. Principales características

 2n3906u.pdf Design, MOSFET, Power

 2n3906u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906u.pdf Database, Innovation, IC, Electricity

 

 
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