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2n6660 2n6661.pdf datasheet:

2n6660_2n66612n6660_2n6661

2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Information.vertical DMOS structure and Supertexs well-proven silicon-gatemanufacturing process. This combination produces devices withthe power handling capabilities of bipolar transistors and with theFeatureshigh input impedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdowndevices are free from thermal runaway and thermally-induced Low power drive requirementsecondary breakdown. Ease of

 

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