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2n6661.pdf datasheet:

2n66612n6661

Supertex inc.2N6661N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6661 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure Low power drive requirementand Supertexs well-proven silicon-gate manufacturing Ease of parallelingprocess. This combination produces a device with the Low CISS and fast switching speedspower handling capabilities of bipolar transistors, and the Excellent thermal stabilityhigh input impedance and positive temperature coefficient Integral source-drain diodeinherent in MOS devices. Characteristic of all MOS High input impedance and high gainstructures, this device is free from thermal runaway and Hi-Rel processing availablethermally-induced secondary breakdown. ApplicationsSupertex

 

Keywords - ALL TRANSISTORS DATASHEET

 2n6661.pdf Design, MOSFET, Power

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 2n6661.pdf Database, Innovation, IC, Electricity

 

 
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