2n6661csm4.pdf datasheet:

2N6661CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13ENHANCEMENT MODE (0.055 0.006)(0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.V 90V(0.009)DSS3 2I 0.9AD0.234 1min.(0.009)R 4.0 DS(on)FEATURES 1.02 0.20 2.03 0.20(0.04 0.008) (0.08 0.008) Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain CERAMIC LCC3 PACKAGE (MO-041BA)(Underside View) DESCRIPTION PAD 1 DRAIN PAD 3 SOURCE This enhancement-mode (normally-off) vertical DMOS FET isPAD 2 N/C PAD 4 GATE ideally suited to a wide range of switching and amplifyingapplications where high breakdown voltage, high inputimpedance, low input capacitance, and fast switching speedsare desired. High Reliability Screening options are av