2n6661dcsm.pdf datasheet:

2N6661DCSM MECHANICAL DATA DUAL NCHANNEL Dimensions in mm (inches) ENHANCEMENT MODE 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)MOSFET 2 3VDSS 90V 1 4ID 0.9A A0.236 5rad.RDS(on) 4.0 (0.009)6.22 0.13 A = 1.27 0.13(0.05 0.005)(0.245 0.005)FEATURES Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain CERAMIC LCC2 PACKAGE (Underside View) DESCRIPTION PAD 1 DRAIN 1 PAD 4 DRAIN 2 These Dual enhancement-mode (normally-off) vertical DMOS PAD 2 GATE 1 PAD 5 SOURCE 2 FETs are ideally suited to a wide range of switching and PAD 3 GATE 2 PAD 6 SOURCE 1 amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.