2n6661m1a.pdf datasheet:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 90V VGS Gate Source Voltage 20V ID TC = 25C Continuous Drain Current 1.0A IDM Pulsed Drain Current (1) 3.0A PD TC 25C Total Power Dissipation at 8.33W De-rate TC > 25C 66.7mW/C TJ Operating Temperature Range -55 to +150C Tstg Storage Temperature Range -65 to +150C THERMAL PROPERTIES Symbols Parameters Max. Units RJC Thermal Resistance, Junction To Case 15 C/W Notes NotesNotesNotes(1) Repetitive Rating: Pulse width li