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2sa1790.pdf Principales características:

2sa17902sa1790

Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC4626 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment 1 and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V 1 Base Collector current IC 30 mA 2 Emitter EIAJ SC 75 Collector power dissipation PC 125 mW 3 Collector SS Mini Type Package Junction temperature Tj 125 C Marking symbol E Storage temperature Tstg 55 +125 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1

 

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 2sa1790.pdf Design, MOSFET, Power

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