2sc2073.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC =100A, IE=0 150 VCollector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 150 VEmitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5