2sc2075.pdf datasheet:

isc Silicon NPN Power Transistor 2SC2075DESCRIPTIONHigh transition frequencyWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS27MHz Power Amplifier ApplicationsRecommended for output stage applicationof AM 4W transmitterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV 80 VCER Collector-Emitter Voltage R =150BEV Emitter-Base Voltage 4 VEBOI Collector Current-Continuous 4 ACI Emitter current 4 AECollector Power DissipationPc 10 W@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC2075ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL