2sc2078.pdf datasheet:

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150 Collector Current- :IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=150 75 VVEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A Collector Power Dissipation 1.2 @ Ta=25 PC W Collector Power Dissipation 10 @ TC=50 TJ Junction Temperature 150 Storage Temperature Range -55~150 Tstgisc Websitewww.iscsemi.cn www.iscsemi.cnINCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specif