2sc3356.pdf datasheet:

2SC3356 Silicon Epitaxial Planar TransistorA SOT-23 Dim Min MaxFEATURES A 2.70 3.10E Low noise and high gain. B 1.10 1.50K BNF=1.1dB TYP.,Ga=11dB TYP. C 1.0 Typical@VCE=10V,IC=7mA, f=1.0GHz D 0.4 TypicalE 0.35 0.48J High power gain. MAG=13dB TYP. DG 1.80 2.00@VCE=10V,IC=20mA,f=1.0GHz. GH 0.02 0.1J 0.1 TypicalHK 2.20 2.60APPLICATIONSCAll Dimensions in mm Designed for low noise amplifier at VHF,UHF and CATV band. SOT-23ORDERING INFORMATIONType No. Marking Package Code 2SC3356 R23/R24/R25 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UnitsCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3 VCollector Current -Continuous IC 100 mACollector Dissipation PC 200 mWTj,Tstg Junction and Storage Temperature -65 to +150 EL