2sk3873-01.pdf datasheet:
2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Equivalent circuit schematicItem Symbol Ratings Unit RemarksDrain(D)Drain-source voltage VDS 280 VVDSX 280 VVGS=-30VContinuous Drain Current ID 56 APulsed Drain Current ID(puls] 224 AGate(G)Gate-Source Voltage VGS 30 VMaximum Avalanche current IAR 56 ANote *1Source(S)Non-Repetitive EAS 1039.1 mJNote *2
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2sk3873-01.pdf Design, MOSFET, Power
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