aotf256l.pdf datasheet:

isc N-Channel MOSFET Transistor AOTF256LFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 12 ADI Drain Current-Single Pluse 35 ADMP Total Dissipation @T =25 33 WD CT Max. Operating Junction Temperature -55~175 JStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 4.6th j-c1isc websi