ap18n03d.pdf Principales características:
AP18N03D 30V N-Channel Enhancement Mode MOSFET Description The AP18N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R
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ap18n03d.pdf Design, MOSFET, Power
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