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ap18n20gh-hf ap18n20gj-hf.pdf Principales características:

ap18n20gh-hf_ap18n20gj-hfap18n20gh-hf_ap18n20gj-hf

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-252(H) ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18N20GJ) are available for low-profile applications. G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain

 

Keywords - ALL TRANSISTORS. Principales características

 ap18n20gh-hf ap18n20gj-hf.pdf Design, MOSFET, Power

 ap18n20gh-hf ap18n20gj-hf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap18n20gh-hf ap18n20gj-hf.pdf Database, Innovation, IC, Electricity

 

 
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