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AP18N20GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G D low on-resistance and cost-effectiveness. TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 V Continuous Drain Current, VGS @ 10V ID@TC=25 18 A Continuous Drain Current, VGS @ 10V ID@TC=100 9.5 A IDM Pulsed Drain Current1 60 A PD@TC=25 Total Power Dissipation 34.7 W Linear Derating Factor 0.28 W/ TS

 

Keywords - ALL TRANSISTORS. Principales características

 ap18n20gi.pdf Design, MOSFET, Power

 ap18n20gi.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap18n20gi.pdf Database, Innovation, IC, Electricity

 

 
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