ap200n12p ap200n12t.pdf Principales características:
AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R
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ap200n12p ap200n12t.pdf Design, MOSFET, Power
ap200n12p ap200n12t.pdf RoHS Compliant, Service, Triacs, Semiconductor
ap200n12p ap200n12t.pdf Database, Innovation, IC, Electricity
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