ap20g04gd.pdf Principales características:
AP20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP20G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS D R
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ap20g04gd.pdf Design, MOSFET, Power
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