ap20g45eh ap20g45ej.pdf datasheet:

AP20G45EH/JAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORDescription VCES 450VICP 130AGCE TO-252(H)* High Input Impedance* High Pick Current CapabilityC* 4.5V Gate DriveG* Strobe Flash ApplicationsGCTO-251(J)EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCESCollector-Emitter Voltage 450 VVGEGate-Emitter Voltage 6 VIGEPPulsed Gate-Emitter Voltage 8 VICPPulsed Collector Current 130 APD@TC=25Maximum Power Dissipation 20 W TSTGStorage Temperature Range -55 to 150 TJOperating Junction Temperature Range -55 to 150 Electrical Characteristics@Tj=25oC(unless otherwise specified)Symbol Parameter Test Conditions Min. Typ. Max. UnitsVGE=6V, VCE=0VIGES Gate-Emitter Leakage Current - - 10 uAVCE=450V, VGE=0VICES Collector-Emitter Leakage Current (Tj=25) - - 10 uAV