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ap20gt60asi-hf.pdf datasheet:

ap20gt60asi-hfap20gt60asi-hf

AP20GT60ASI-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600V High Speed Switching IC 12AG Low Saturation Voltage CETO-220CFM(I)VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant ProductGEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Voltage +20 VIC@TC=25oC Collector Current 25 AIC@TC=100oC Collector Current 12 AICM Pulsed Collector Current1 50 AIF@TC=100oC Diode Forward Current 8 AIFM Diode Pulse Forward Current 40 APD@TC=25oC Maximum Power Dissipation 33 W oTSTG Storage Temperature Range -55 to 150 CoTJ Operating Junction Temperature Range 150 CNotes:1.Pulse width limited by Max. junction temperature .Thermal DataSymbol Parameter Value UnitsoRthj-c Thermal Resistance Junction-Case 3.8 C/W

 

Keywords - ALL TRANSISTORS DATASHEET

 ap20gt60asi-hf.pdf Design, MOSFET, Power

 ap20gt60asi-hf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ap20gt60asi-hf.pdf Database, Innovation, IC, Electricity

 

 
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