ap3403gh ap3403gj.pdf datasheet:

AP3403GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS -30V DSimple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A GSDescriptionGDSAdvanced Power MOSFETs utilized advanced processing techniques to TO-252(H)achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The TO-252/TO-251 package is universally used for all commercial-industrial application.GDSTO-251(J)Absolute Maximum RatingsSymbol Parameter Rating UnitsVDS Drain-Source Voltage - 30 VVGS Gate-Source Voltage 20 VID@TA=25 Continuous Drain Current -10 AID@TA=70 Continuous Drain Current -8.6 AIDM Pulsed Drain Current1 -48 APD@TA=25 Total Power Dissipation 36.7 W Linear Derating Factor 0