ap50n06y.pdf datasheet:

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS DR

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 ap50n06y.pdf Design, MOSFET, Power

 ap50n06y.pdf RoHS Compliant, Service, Triacs, Semiconductor

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