ap5n10bsi.pdf Principales características:
AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS D R
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ap5n10bsi.pdf Design, MOSFET, Power
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