apt1001r1bn.pdf datasheet:

DTO-247GAPT1001R1BN 1000V 10.5A 1.10SAPT1001R3BN 1000V 10.0A 1.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 1001RBN 1001R3BN UNITVDSS Drain-Source Voltage1000 1000 VoltsID Continuous Drain Current @ TC = 25C10.5 10AmpsIDM Pulsed Drain Current 142 40VGS Gate-Source Voltage30 VoltsTotal Power Dissipation @ TC = 25C 310 WattsPDLinear Derating Factor 2.48 W/CTJ,TSTG Operating and Storage Junction Temperature Range-55 to 150CTL Lead Temperature: 0.063" from Case for 10 Sec.300STATIC ELECTRICAL CHARACTERISTICSSymbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNITAPT1001R1BN 1000Drain-Source Breakdown VoltageBVDSSVolts(VGS = 0V, ID = 250 A)APT1001R3BN 1000On State Drain Cur