apt1001r1bvfr.pdf datasheet:

APT1001R1BVFR1000V 11A 1.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested DFREDFET Lower Leakage Popular TO-247 PackageG Faster SwitchingSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1001R1BVFR UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C11AmpsIDM Pulsed Drain Current 144VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissipation @ TC = 25C 280 WattsPDLinear Derating Factor 2.24 W/CT