apt1001r1hvr.pdf datasheet:

APT1001R1HVR1000V 9A 1.100POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower Leakage Popular TO-258 PackageGSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT1001R1HVR UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C9AmpsIDM Pulsed Drain Current 136VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissipation @ TC = 25C 200 WattsPDLinear Derating Factor 1.6 W/CTJ,TSTG Operating and Storage Junction Temperature