auirf1010ez auirf1010ezs auirf1010ezl.pdf datasheet:

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, thisS S S D HEXFET Power MOSFET utilizes the latest processing G D G G techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction TO-220AB D2Pak TO-262 AUIRF1010EZ operating temperature, fast switching speed and improved AUIRF1010EZL AUIRF1010EZS repetitive avalanche rating. These features combine to make this de