auirlr2703.pdf datasheet:

AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * Description S Specifically designed for Automotive applications, this cellular G design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon D-Pak AUIRLR2703 area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well G D Sknown for, provides the designer with an extremely efficient and