bf908 bf908r 1.pdf Principales características:
DISCRETE SEMICONDUCTORS DATA SHEET BF908; BF908R Dual-gate MOS-FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES High forward transfer admittance handbook, halfpage d 4 3 Short channel transistor with high forward transfer admittance to input capacitance ratio g2 Low noise gain controlled amplifier up to 1 GHz. g1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, 1 2 such as television tuners and professional s,b communications equipment. Top view MAM039 DESCRIPTION Fig.1 Simplified outline (SOT143) and Depletion type field-effect transistor in a plastic symbol; BF908. microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges
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