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DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET 1995 Apr 25 Preliminary specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1 s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz. 3g2 gate 2 4g1 gate 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional d communications equipment. 3 4 g2 DESCRIPTION g1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by 2 1 integrated back-

 

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 bf908wr 1.pdf Design, MOSFET, Power

 bf908wr 1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bf908wr 1.pdf Database, Innovation, IC, Electricity

 

 
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