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dhs031n07p.pdf datasheet:

dhs031n07pdhs031n07p

DHS031N07P100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedV =68VDSSexcellent Rdson and low gate charge. Which accords withGR =2.9mDS(on) (TYP)the RoHS standard.13 SI Silicon limit= 150AD2 FeaturesIPackage limit 100A= Fast switching D Low on resistance Low gate charge Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Power switching applications Hard switching and high speed circuit Power tools UPSDFN5*6 Motor control4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 68 VDSSGate-to-Source Voltage V

 

Keywords - ALL TRANSISTORS DATASHEET

 dhs031n07p.pdf Design, MOSFET, Power

 dhs031n07p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dhs031n07p.pdf Database, Innovation, IC, Electricity

 

 
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