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dhs035n10 dhs035n10e.pdf datasheet:

dhs035n10_dhs035n10edhs035n10_dhs035n10e

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S2 FeaturesI = 180AD Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Motor control and drive Battery management UPS (Uninterrupible Power Supplies)TO-263TO-2204 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 100 VDSSGate-to-Source

 

Keywords - ALL TRANSISTORS DATASHEET

 dhs035n10 dhs035n10e.pdf Design, MOSFET, Power

 dhs035n10 dhs035n10e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 dhs035n10 dhs035n10e.pdf Database, Innovation, IC, Electricity

 

 
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