dhs051n10p.pdf datasheet:

DHS051N10P108A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced Splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.0mDS(on) (TYP)G1standard.I = 108A3 S D2 Features Fast switching Low on resistance Low gate charge High avalanche current Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Switching power supply Inverter power management system Power tool control Automotive electronics applications4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Value UnitsDrian-Source Voltage V 100 VDSSGate-Source Voltage V 20 VGSST =25 108 AC