dhsj21n65w.pdf datasheet:

DHSJ21N65W 21A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with R = 150m DS(on) (TYP)Gthe RoHS standard. 1I = 21A 3 S D2 Features Fast switching Low on resistance Low gate charge Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V test DS 3 Applications Power factor correction(PFC). Switched mode power supplies(SMPS). Uninterruptible power supply(UPS). TO-247 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25,unless otherwise noted) Parameter Symbol Value Units Drian-to-Source Voltage V 650 V DSSGate-to-Source Voltage V 30 V GSST =25 21 A CCon