dhsj21n65z.pdf datasheet:

DHSJ21N65Z16A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with the RoHSR = 150mDS(on) (TYP)standard.I = 16 AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications LED/LCD/PDP TV and monitor Lighting Solar/Renewable/UPS-Micro Inverter System Charger PDFN4(8*8) Power Supply4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 650 VDSSGate-to-Source Voltage V 30 VGSST =25 16 ACContinuous Drain Current IDT =100