hgtd8p50.pdf datasheet:

HGTD8P50G1,S E M I C O N D U C T O RHGTD8P50G1S8A, 500V P-Channel IGBTsMay 1996Features PackageJEDEC TO-251AA 8A, 500VEMITTER 3.7V VCE(SAT)COLLECTORGATE Typical Fall Time - 1800ns High Input Impedance(FLANGE) TJ = +150oCCOLLECTORDescriptionJEDEC TO-252AAThe HGTD8P50G1 and the HGTD8P50G1S are P-channelenhancement-mode insulated gate bipolar transistors (IGBTs)(FLANGE)designed for high voltage, low on-dissipation applications suchCOLLECTORGATEas switching regulators and motor drives. This P- channel IGBTCOLLECTORcan be paired with N-Channel IGBTs to form a complementaryEMITTERpower switch and it is ideal for half bridge circuit configurations.These types can be operated directly from low power integratedcircuits.PACKAGING AVAILABILITYSymbolPART NUMBER PACKAGE BRANDCHGTD8P50G1 TO-251AA G8P50GHGTD8P50