hgtg12n60c3d.pdf datasheet:

UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiode24 A, 600 VHGTG12N60C3Dwww.onsemi.comThe HGTG12N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. The device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies only moderately between 25C andG150C. The IGBT used is the development type TA49123. The diodeused in anti parallel with the IGBT is the development type TA49061.EThis IGBT is ideal for many high voltage switching applicationsoperating at moderate frequencies where low conduction losses areEessential CGFormerly Developmental Type TA49117.Features 24 A, 600 V at TC = 25C Typical Fall Time 210 ns at TJ = 150CTO-247-3LD SHORT LEAD Short Circuit Rating