hgtp12n60a4 hgtg12n60a4 hgt1s12n60a4s.pdf datasheet:

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4SData Sheet May 1999 File Number 4656.2600V, SMPS Series N-Channel IGBT FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices have the high inputimpedance of a MOSFET and the low on-state conduction Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oCloss of a bipolar transistor. The much lower on-state voltage Low Conduction Lossdrop varies only moderately between 25oC and 150oC. Temperature Compensating SABER ModelThis IGBT is ideal for many high voltage switchinghttp://www.intersil.comapplications operating at high frequencies where lowconduction losses are essenti