ipd640n06lg.pdf datasheet:

IPD640N06LGwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVGSGate-Source Voltage 20 VTC = 25 C35IDContinuous Drain Current (TJ = 175 C)bTC = 100 C28IDMPulsed Drain Current 100 AISContinuous Source Current (Diode Conduction) 23IASAvalanche Current 20Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS20 mJTC = 25 C100PDMaximum Power Dissipation WTA = 25 C3aTJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RESISTANCE RATING