irf1010nspbf irf1010nlpbf.pdf datasheet:

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable devicefor use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides thehighest power capability and the lowest possible on-resistance in any existing surface