irf1405zpbf irf1405zspbf irf1405zlpbf.pdf datasheet:

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These features combineto make this design an extremely efficient andreliable device for use in a wide variety ofTO-220ABD2Pak TO-262applications.IRF1405ZPbFIRF1405ZSPbF IRF1405ZLPbFAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 150Continuous Drain Current, VGS @ 10V (Silico