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irf540n.pdf Principales características:

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R IRF540N N-Ch 100V Fast Switching MOSFETs Super Low Gate Charge Product Summary Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench BVDSS RDSON ID technology 100V 47m 27A Description TO220 Pin Configuration The IRF540N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRF540N meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 100 V DS V Gate-Source Voltage 20 V GS I =25 Continuous Drain Current, V @ 10V1 27 A D@T GS C I =100 Continuous Drain Current, V @ 10V1 17 A D@T GS C I =25 Continuous Drain Current, V @ 10V1 4.2 A D@T GS A I =

 

Keywords - ALL TRANSISTORS. Principales características

 irf540n.pdf Design, MOSFET, Power

 irf540n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf540n.pdf Database, Innovation, IC, Electricity

 

 
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