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irg4ibc20ud.pdf datasheet:

irg4ibc20udirg4ibc20ud

PD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200G kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 6.5AE ultrasoft recovery antiparallel diodesn-channel Tighter parameter distribution Industry standard Isolated TO-220 FullpakTM outlineBenefits Simplified assembly Highest efficiency and power density HEXFREDTM antiparallel Diode minimizes switching losses and EMITO-220 FULLPAKAbsolute Maximum Ratings Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25C Continuous Collector Current 11.4IC

 

Keywords - ALL TRANSISTORS DATASHEET

 irg4ibc20ud.pdf Design, MOSFET, Power

 irg4ibc20ud.pdf RoHS Compliant, Service, Triacs, Semiconductor

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