irgc100b120ub.pdf datasheet:

PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer Optimized for Welding, UPS, and Induction Heating Rugged with Ultra Fast Performance Excellent Current Sharing in Parallel OperationElectrical Characteristics (Wafer Form) Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.37V min, 1.58V max IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 1200V min TJ = 25C, ICES = 1mA, VGE = 0V VGE(th) Gate Threshold Voltage 4.4V min, 6.0V max VG