irgc16b120kb.pdf datasheet:

PD - 94562IRGC16B120KBDie in Wafer FormFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.55V@ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel OperationReference Standard IR Package Part: GB15RF120KElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.90V min, 2.35V max IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 1200V min TJ = 25C, ICES = 125A, VGE = 0VVGE(th) Gate Threshold Voltage 4.4V min, 6.0V max VGE