irgc16b60kb.pdf datasheet:

PD - 94657IRGC16B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel Operation Qualified for Industrial MarketElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 0.95V min, 1.35V max IC = 3A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V min TJ = 25C, ICES = 1mA, VGE = 0VVGE(th) Gate Threshold Voltage 3.5V min, 5.5V max VGE = VCE , TJ =25