irlms2002pbf.pdf datasheet:

PD- 95675IRLMS2002PbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 6l N-Channel MOSFET D DVDSS = 20Vl Surface Mount25Dl Available in Tape & Reel Dl 2.5V Rated3 4l Lead-Free G SRDS(on) = 0.030Top ViewDescriptionThese N-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve theextremely low on-resistance per silicon area. This benefitprovides the designer with an extremely efficient device foruse in battery and load management applications.The Micro6 package with its customized leadframeproduces a HEXFET power MOSFET with RDS(on) 60%less than a similar size SOT-23. This package is ideal forapplications where printed circuit board space is at apremium. It's unique thermal design and RDS(on) reductionenables a current-handling increase of nearly 300%Micro6compared to the SOT-